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Typical Characteristics (Q1 N-Channel) T J = 25°C unless otherwise noted
10
I D = 9A
2000
8
6
1000
C iss
4
V DD = 15V
V DD = 25V
V DD = 20V
100
C oss
2
f = 1MHz
V GS = 0V
C rss
0
0
4
8
12
16
30
0.1
1
10
40
Q g , GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
30
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
25
Limited by Package
R T JC = 4.1 C/W
10
T J = 125 o C
T J = 25 o C
20
15
10
5
o
V GS = 10V
V GS = 4.5V
1
0.001
0.01
0.1
1
10
100
0
25
50
75
100
125
150
T C , CASE TEMPERATURE ( C )
100
t AV , TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
10us
o
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10000
V GS = 10V
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
150 – T
------------------------
10
THIS AREA IS
100us
1000
CURRENT AS FOLLOWS:
C
I = I 25
125
1
LIMITED BY r DS(on)
SINGLE PULSE
T J = MAX RATED
1ms
100
T C = 25 o C
R T JC = 4.1 C/W
10
R T JC = 4.1 C/W
10
10
10
10
10
10
0.1
1
T C = 25 o C
o
10
10ms
DC
80
10
-5
SINGLE PULSE
o
-4 -3
-2
-1
0
1
V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
?2013 Fairchild Semiconductor Corporation
FDD8424H Rev.C1
5
www.fairchildsemi.com
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